Infineon 2A200HB12C2F: A High-Performance 200A/1200V Dual IGBT Module for Industrial Drives and UPS Applications

Release date:2025-11-05 Number of clicks:173

Infineon 2A200HB12C2F: A High-Performance 200A/1200V Dual IGBT Module for Industrial Drives and UPS Applications

The demand for robust and efficient power conversion continues to grow across heavy-duty industrial applications. Addressing this need, the Infineon 2A200HB12C2F stands out as a premier dual IGBT module, engineered to deliver superior performance and reliability in challenging environments such as industrial motor drives and uninterruptible power supplies (UPS).

This module integrates two high-current IGBTs in a single half-bridge configuration, each rated for 200 Amperes of continuous current and a blocking voltage of 1200 Volts. This high power density is crucial for systems requiring compact design without compromising on output power. The module is built using Infineon's advanced third-generation IGBT7 technology, which sets a new benchmark for performance. Key advantages of this technology include significantly reduced VCE(sat) saturation voltage and lower switching losses compared to previous generations. This translates directly into higher overall system efficiency, reduced heat generation, and the potential for higher switching frequencies, allowing for smaller passive components in the circuit design.

For industrial AC drives, which control the speed and torque of electric motors, the benefits are substantial. The low losses of the 2A200HB12C2F minimize energy waste during operation, leading to lower electricity costs and a reduced carbon footprint. Furthermore, its high ruggedness and exceptionally high short-circuit withstand time (tsc) ensure operational stability and protect against fault conditions that are common in industrial settings.

In UPS applications, where reliability is non-negotiable, this IGBT module provides the robust performance needed for both online and line-interactive systems. Its high efficiency is critical for maximizing battery life during backup operation and for reducing heat dissipation in tightly packed server racks or power enclosures. The module’s low-loss characteristics also contribute to a higher overall efficiency rating for the UPS unit, a key specification for data centers and critical infrastructure aiming for lower PUE (Power Usage Effectiveness) values.

The package itself is designed for durability and effective cooling. The aluminum nitride (AlN) ceramic substrate provides excellent electrical isolation and superior thermal conductivity, efficiently transferring heat from the silicon dies to the baseplate and onward to the heat sink. This design, coupled with the solder-free .XT technology, enhances power cycling capability and long-term reliability, making it suited for 24/7 operation.

ICGOODFIND: The Infineon 2A200HB12C2F is a high-performance dual IGBT module that leverages cutting-edge IGBT7 technology to offer industry-leading efficiency, power density, and robustness. It is an optimal solution for engineers designing next-generation industrial drives and UPS systems where reliability, efficiency, and compactness are paramount.

Keywords: IGBT7 Technology, Industrial Drives, UPS Applications, High Power Density, Low Switching Losses.

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