Infineon IPW60R024P7: A 600V CoolMOS™ P7 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in switched-mode power supplies (SMPS), industrial drives, and renewable energy systems demands power transistors with superior performance. Addressing this need, the Infineon IPW60R024P7 stands out as a premier 600V superjunction MOSFET from the revolutionary CoolMOS™ P7 series. This device is engineered to set a new benchmark in high-efficiency switching applications.

At the core of the IPW60R024P7 is Infineon’s advanced superjunction (SJ) technology. The P7 generation represents a significant leap forward, focusing on optimizing the key trade-offs that have traditionally challenged power electronics designers: switching losses, conduction losses, and cost-effectiveness. The result is a transistor that delivers an exceptional low on-state resistance (RDS(on)) of just 24 mΩ, which directly translates to reduced conduction losses and higher overall efficiency, especially in high-current applications.

A defining feature of the CoolMOS™ P7 family, exemplified by this component, is its superior switching performance. The device exhibits remarkably low gate charge (Qg) and low effective output capacitance (Coss(eff)). This translates to faster switching speeds, minimized turn-on and turn-off losses, and the ability to operate efficiently at higher frequencies. This allows designers to shrink the size of magnetic components like transformers and inductors, thereby increasing power density and reducing system size and weight.

Furthermore, the IPW60R024P7 is designed with robustness and reliability in mind. It offers an intrinsic fast body diode with excellent reverse recovery characteristics, which is crucial for hard-switching topologies such as power factor correction (PFC) stages. This reduces stress on the switch and minimizes electromagnetic interference (EMI). The high avalanche ruggedness ensures enhanced reliability in harsh operating environments, providing a critical safety margin against voltage spikes.

The benefits of integrating this MOSFET into a design are substantial. Engineers can achieve:

Higher system efficiency across various load conditions, crucial for meeting international energy regulations.

The ability to increase switching frequencies, enabling smaller, lighter, and more compact power supplies.

Simplified thermal management due to reduced power losses, potentially lowering the need for large heat sinks.

Improved cost-performance ratio at the system level.

Typical applications leveraging these advantages include server and telecom SMPS, solar inverters, industrial motor controls, welding equipment, and charging infrastructure for electric vehicles.

ICGOODFIND: The Infineon IPW60R024P7 is a pinnacle of power MOSFET design, masterfully balancing ultra-low conduction losses with exceptional switching performance. It empowers engineers to push the boundaries of efficiency and power density, making it an ideal choice for the next generation of high-performance, energy-conscious power electronics.

Keywords: CoolMOS™ P7, High-Efficiency Switching, Low RDS(on), Superjunction MOSFET, Power Density