Infineon AUIR3314STRL: High-Performance Automotive Grade Power MOSFET

In the rapidly evolving landscape of automotive electronics, the demand for robust, efficient, and reliable power management components is higher than ever. The Infineon AUIR3314STRL stands out as a premier solution, engineered to meet the stringent requirements of modern automotive applications. This automotive-grade Power MOSFET leverages advanced semiconductor technology to deliver exceptional performance in a compact package, making it an ideal choice for a wide range of high-power systems.

Designed with ultra-low on-state resistance (RDS(on)) of just 1.6 mΩ typical, the AUIR3314STRL minimizes conduction losses, thereby enhancing overall system efficiency and reducing heat generation. This feature is critical in automotive environments where thermal management is paramount. The device operates reliably at high temperatures, capable of handling a continuous drain current (ID) of 240 A at 25°C, ensuring stable performance under demanding conditions such as in electric power steering (EPS), braking systems, and engine management units.

The AUIR3314STRL is built using Infineon’s proprietary OptiMOS™ technology, which optimizes switching performance and ruggedness. This technology ensures fast switching speeds, reducing switching losses and enabling higher frequency operations—a key advantage for improving the power density of inverters and DC-DC converters. Additionally, the MOSFET boasts an enhanced avalanche robustness, providing superior protection against voltage spikes and transients commonly encountered in automotive electrical systems.

Packaged in a D2PAK (TO-263) format, the device offers excellent thermal characteristics and mechanical durability, suitable for automated assembly processes. Its AEC-Q101 qualification guarantees that it meets the highest standards for automotive reliability, including resistance to humidity, temperature cycling, and operational longevity.

ICGOOODFIND: The Infineon AUIR3314STRL exemplifies cutting-edge power semiconductor design, offering automotive engineers a high-efficiency, high-reliability MOSFET that excels in performance, thermal management, and durability for next-generation vehicles.

Keywords:

Automotive Grade, OptiMOS™ Technology, Low RDS(on), High Current Handling, AEC-Q101 Qualified