Infineon IAUT260N10S5N019: A High-Performance 100V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IAUT260N10S5N019 stands as a testament to these principles, representing a significant advancement in power MOSFET technology. As part of Infineon's renowned OptiMOS™ 5 100V family, this component is engineered to deliver exceptional efficiency and power density in a wide array of demanding applications.

The core of this MOSFET's superiority lies in its advanced silicon technology. It features an extremely low typical on-state resistance (RDS(on)) of just 0.26 mΩ. This remarkably low resistance is a key factor in minimizing conduction losses, which directly translates to higher efficiency. When a device wastes less power as heat, systems can run cooler, enabling the use of smaller heatsinks and contributing to a more compact and cost-effective overall design. This makes the IAUT260N10S5N019 an ideal choice for power conversion stages where every percentage point of efficiency counts.

Furthermore, the component boasts outstanding switching performance. The OptiMOS 5 technology ensures very low gate charge (Qg) and figures of merit that optimize the trade-off between switching losses and conduction losses. This allows for operation at higher switching frequencies without a prohibitive efficiency penalty. Designers can leverage this to shrink the size of magnetic components like inductors and transformers, further increasing the power density of end products such as server and telecom power supplies, industrial motor drives, and solar inverters.

The device is offered in the robust SuperSO8 package (Infineon’s S5N019), which provides superior thermal and electrical characteristics compared to standard SO-8 packages. This package is designed for enhanced power dissipation, ensuring reliable operation even under high-stress conditions. Its mechanical robustness also aids in achieving higher manufacturing yields and long-term reliability in the field.

Safety and reliability are further reinforced by its 100% avalanche tested qualification, guaranteeing ruggedness and the ability to handle unexpected voltage spikes in the application.

ICGOOODFIND: The Infineon IAUT260N10S5N019 is a top-tier power MOSFET that sets a high bar for performance. Its industry-leading low RDS(on), excellent switching characteristics, and robust packaging make it a premier solution for designers aiming to push the limits of efficiency and power density in modern 100V applications.

Keywords: OptiMOS 5, Low RDS(on), High Power Density, SuperSO8 Package, Switching Performance.